MJE700G Datasheet. Specs and Replacement

Type Designator: MJE700G  📄📄 

SMD Transistor Code: JE700

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

 MJE700G Substitution

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MJE700G datasheet

 ..1. Size:126K  onsemi

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MJE700G

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit... See More ⇒

 8.1. Size:256K  motorola

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MJE700G

Order this document MOTOROLA by MJE700/D SEMICONDUCTOR TECHNICAL DATA PNP MJE700,T Plastic Darlington Complementary Silicon Power MJE702 Transistors MJE703 . . . designed for general purpose amplifier and low speed switching applications. NPN High DC Current Gain MJE800,T hFE = 2000 (Typ) @ IC = 2.0 Adc Monolithic Construction with Built in Base Emitter Resis... See More ⇒

 8.2. Size:51K  fairchild semi

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MJE700G

MJE700/701/702/703 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Sym- Unit Parameter Value bol s VCB... See More ⇒

 8.3. Size:228K  inchange semiconductor

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MJE700G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION Collector Emitter Breakdown Voltage V(BR)CEO =-60 V DC Current Gain hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ... See More ⇒

Detailed specifications: MJE5850G, MJE5851G, MJE5852G, MJE6040T, MJE6041T, MJE6042T, MJE6043T, MJE6045T, TIP142, MJE702G, MJE703G, MJE800G, MJE802G, MJE803G, MJF122G, MJF127G, MJF13009

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