MJF6668G Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

MJF6668G Datasheet. Specs and Replacement

Type Designator: MJF6668G 📄📄

SMD Transistor Code: MJF6668

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO220F

MJF6668G Substitution

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MJF6668G datasheet

..1. Size:153K onsemi

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MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Isolated Overmold Pac... See More ⇒

7.1. Size:338K motorola

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Order this document MOTOROLA by MJF6388/D SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* Complementary Power PNP MJF6668* Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general purpose amplifiers and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON ... See More ⇒

7.2. Size:153K onsemi

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