MJH16010 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJH16010
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 135 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO218
MJH16010 Transistor Equivalent Substitute - Cross-Reference Search
MJH16010 Datasheet (PDF)
7.3. Size:219K inchange semiconductor
mjh16018.pdf
mjh16018.pdf
isc Silicon NPN Power Transistor MJH16018DESCRIPTIONCollector-Emitter Voltage-: V = 800V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed , power switching ininductive circuits where fall time is critical. They are particu-larly suited for line operated swi
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
