All Transistors. MJW21191 Datasheet

 

MJW21191 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJW21191

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO247_TO3PN

MJW21191 Transistor Equivalent Substitute - Cross-Reference Search

 

MJW21191 Datasheet (PDF)

1.1. mjw21191.pdf Size:111K _update

MJW21191
MJW21191

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION ·With TO-247 package ·Complement to type MJW21192 ·Wild area of safe operation APPLICATIONS ·Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

1.2. mjw21192 mjw21191.pdf Size:150K _motorola

MJW21191
MJW21191

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 AMPERES TO

 1.3. mjw21192 mjw21191.pdf Size:155K _onsemi

MJW21191
MJW21191

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages are Available

1.4. mjw21191.pdf Size:227K _inchange_semiconductor

MJW21191
MJW21191

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJW21191 DESCRIPTION ·DC Current Gain ·High Area of Safe Operation APPLICATIONS ·Designed for power audio output, or high power drivers in audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage -150 V VCEO Collector-Emitter Voltage -150 V

Datasheet: MJL21193G , MJL21194G , MJL21195G , MJL21196G , MJL3281AG , MJL4281AG , MJL4302AG , MJW1302AG , BC549 , MJW21192 , MJW21193G , MJW21194G , MJW21195G , MJW21196G , MJW3281AG , 3CD010 , 3CD020 .

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