MJW21191 Specs and Replacement
Type Designator: MJW21191
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO247
TO3PN
- BJT ⓘ Cross-Reference Search
MJW21191 datasheet
..1. Size:150K motorola
mjw21192 mjw21191.pdf 

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 AMPER... See More ⇒
..2. Size:155K onsemi
mjw21192 mjw21191.pdf 

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http //onsemi.com All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages ... See More ⇒
..3. Size:111K savantic
mjw21191.pdf 

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER ... See More ⇒
..4. Size:222K inchange semiconductor
mjw21191.pdf 

isc Silicon PNP Power Transistor MJW21191 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High SOA 20 A, 18 V, 100 ms TO 3PN Package Complement to Type MJW21192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS designed for power audio output, or high power drivers in audio amplifiers applications AB... See More ⇒
7.1. Size:157K onsemi
mjw21195 mjw21196.pdf 

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒
7.2. Size:153K onsemi
mjw21195g.pdf 

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒
7.3. Size:153K onsemi
mjw21196g.pdf 

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒
7.4. Size:119K onsemi
mjw21193 mjw21194.pdf 

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized COMPLEMENTARY SILICON High DC Current Gain POWER TRANSISTORS Excelle... See More ⇒
7.5. Size:141K onsemi
mjw21194g.pdf 

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P... See More ⇒
7.6. Size:141K onsemi
mjw21193g.pdf 

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P... See More ⇒
7.7. Size:110K savantic
mjw21192.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL... See More ⇒
7.8. Size:220K inchange semiconductor
mjw21194.pdf 

isc Silicon NPN Power Transistor MJW21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 Adc FE Complement to Type MJW21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM ... See More ⇒
7.9. Size:218K inchange semiconductor
mjw21193.pdf 

isc Silicon PNP Power Transistor MJW21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 Adc FE Complement to Type MJW21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM... See More ⇒
7.10. Size:218K inchange semiconductor
mjw21192.pdf 

isc Silicon NPN Power Transistor MJW21192 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 Adc TO 3PN Package Complement to Type MJW21191 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power audio output,or high power drivers in audio ... See More ⇒
Detailed specifications: MJL21193G, MJL21194G, MJL21195G, MJL21196G, MJL3281AG, MJL4281AG, MJL4302AG, MJW1302AG, 2N3906, MJW21192, MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 3CD010, 3CD020
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