MJW21193G PDF and Equivalents Search

 ..1. Size:141K  onsemi

 mjw21193g.pdf

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P... See More ⇒

 6.1. Size:119K  onsemi

 mjw21193 mjw21194.pdf

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized COMPLEMENTARY SILICON High DC Current Gain POWER TRANSISTORS Excelle... See More ⇒

 6.2. Size:218K  inchange semiconductor

 mjw21193.pdf

isc Silicon PNP Power Transistor MJW21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 Adc FE Complement to Type MJW21194 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM... See More ⇒

 7.1. Size:150K  motorola

 mjw21192 mjw21191.pdf

Order this document MOTOROLA by MJW21192/D SEMICONDUCTOR TECHNICAL DATA NPN MJW21192 Complementary Silicon Plastic PNP Power Transistors MJW21191 Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 AMPER... See More ⇒

 7.2. Size:157K  onsemi

 mjw21195 mjw21196.pdf

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒

 7.3. Size:155K  onsemi

 mjw21192 mjw21191.pdf

MJW21192 (NPN), MJW21191 (PNP) Complementary Silicon Plastic Power Transistors Specifically designed for power audio output, or high power drivers in audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperature http //onsemi.com All On Characteristics at Temperature High SOA 20 A, 18 V, 100 ms 8.0 A TO-247AE Package POWER TRANSISTORS Pb-Free Packages ... See More ⇒

 7.4. Size:153K  onsemi

 mjw21195g.pdf

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒

 7.5. Size:153K  onsemi

 mjw21196g.pdf

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features 16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 Adc COMPLEMENTARY Excell... See More ⇒

 7.6. Size:141K  onsemi

 mjw21194g.pdf

MJW21193 (PNP) MJW21194 (NPN) Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http //onsemi.com Features Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICON hFE = 20 Min @ IC = 8 Adc P... See More ⇒

 7.7. Size:111K  savantic

 mjw21191.pdf

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER ... See More ⇒

 7.8. Size:110K  savantic

 mjw21192.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL... See More ⇒

 7.9. Size:222K  inchange semiconductor

 mjw21191.pdf

isc Silicon PNP Power Transistor MJW21191 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High SOA 20 A, 18 V, 100 ms TO 3PN Package Complement to Type MJW21192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS designed for power audio output, or high power drivers in audio amplifiers applications AB... See More ⇒

 7.10. Size:220K  inchange semiconductor

 mjw21194.pdf

isc Silicon NPN Power Transistor MJW21194 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 Adc FE Complement to Type MJW21193 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio output,disk head positioners and linear applications. ABSOLUTE MAXIMUM ... See More ⇒

 7.11. Size:218K  inchange semiconductor

 mjw21192.pdf

isc Silicon NPN Power Transistor MJW21192 DESCRIPTION DC Current Gain Specified up to 8.0 Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 Adc TO 3PN Package Complement to Type MJW21191 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power audio output,or high power drivers in audio ... See More ⇒