MJW21194G Datasheet and Replacement

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion CharacterizedCOMPLEMENTARY SILICON High DC Current GainPOWER TRANSISTORS Excelle

isc Silicon NPN Power Transistor MJW21194DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 AdcFEComplement to Type MJW21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

Order this documentMOTOROLAby MJW21192/DSEMICONDUCTOR TECHNICAL DATANPNMJW21192Complementary Silicon PlasticPNPPower TransistorsMJW21191Specifically designed for power audio output, or high power drivers in audioamplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 AMPER

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

MJW21192 (NPN),MJW21191 (PNP)Complementary SiliconPlastic Power TransistorsSpecifically designed for power audio output, or high power driversin audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperaturehttp://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 A TO-247AE PackagePOWER TRANSISTORS Pb-Free Packages

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell

MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL

isc Silicon PNP Power Transistor MJW21191DESCRIPTIONDC Current Gain Specified up to 8.0 Amperesat TemperatureHigh SOA: 20 A, 18 V, 100 msTO3PN PackageComplement to Type MJW21192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for power audio output, or high power driversin audio amplifiers applicationsAB

isc Silicon PNP Power Transistor MJW21193DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 AdcFEComplement to Type MJW21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor MJW21192DESCRIPTIONDC Current Gain Specified up to 8.0Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 AdcTO3PN PackageComplement to Type MJW21191Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power audio output,or high power driversin audio