MJW21196G Datasheet, Equivalent, Cross Reference Search
Type Designator: MJW21196G
SMD Transistor Code: MJW21196
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO247
MJW21196G Transistor Equivalent Substitute - Cross-Reference Search
MJW21196G Datasheet (PDF)
mjw21196g.pdf
MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell
mjw21195 mjw21196.pdf
MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell
mjw21192 mjw21191.pdf
Order this documentMOTOROLAby MJW21192/DSEMICONDUCTOR TECHNICAL DATANPNMJW21192Complementary Silicon PlasticPNPPower TransistorsMJW21191Specifically designed for power audio output, or high power drivers in audioamplifiers. DC Current Gain Specified up to 8.0 Amperes at Temperature All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 AMPER
mjw21192 mjw21191.pdf
MJW21192 (NPN),MJW21191 (PNP)Complementary SiliconPlastic Power TransistorsSpecifically designed for power audio output, or high power driversin audio amplifiers. DC Current Gain Specified up to 8.0 A at Temperaturehttp://onsemi.com All On Characteristics at Temperature High SOA: 20 A, 18 V, 100 ms8.0 A TO-247AE PackagePOWER TRANSISTORS Pb-Free Packages
mjw21195g.pdf
MJW21195 (PNP)MJW21196 (NPN)Silicon Power TransistorsThe MJW21195 and MJW21196 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion Characterized High DC Current Gain - hFE = 20 Min @ IC = 8 AdcCOMPLEMENTARY Excell
mjw21193 mjw21194.pdf
MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures16 AMPERES Total Harmonic Distortion CharacterizedCOMPLEMENTARY SILICON High DC Current GainPOWER TRANSISTORS Excelle
mjw21194g.pdf
MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP
mjw21193g.pdf
MJW21193 (PNP)MJW21194 (NPN)Silicon Power TransistorsThe MJW21193 and MJW21194 utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE = 20 Min @ IC = 8 AdcP
mjw21191.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors MJW21191 DESCRIPTION With TO-247 package Complement to type MJW21192 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Emitter 2 Collector 3 Base ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER
mjw21192.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJW21192 DESCRIPTION With TO-247 package Complement to type MJW21191 Wild area of safe operation APPLICATIONS Designed for power audio output, high power drivers in audio amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter ABSOL
mjw21191.pdf
isc Silicon PNP Power Transistor MJW21191DESCRIPTIONDC Current Gain Specified up to 8.0 Amperesat TemperatureHigh SOA: 20 A, 18 V, 100 msTO3PN PackageComplement to Type MJW21192Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for power audio output, or high power driversin audio amplifiers applicationsAB
mjw21194.pdf
isc Silicon NPN Power Transistor MJW21194DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = 8 AdcFEComplement to Type MJW21193Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM
mjw21193.pdf
isc Silicon PNP Power Transistor MJW21193DESCRIPTIONTotal Harmonic Distortion Characterized High DC Current Gain h = 20 Min @ I C = -8 AdcFEComplement to Type MJW21194Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio output,disk head positionersand linear applications.ABSOLUTE MAXIMUM
mjw21192.pdf
isc Silicon NPN Power Transistor MJW21192DESCRIPTIONDC Current Gain Specified up to 8.0Amperes at Temperature High DC Current Gain h FE = 5(Min )@ I C = 8 AdcTO3PN PackageComplement to Type MJW21191Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power audio output,or high power driversin audio
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
