3CD020 Specs and Replacement
Type Designator: 3CD020
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO257
3CD020 Substitution
- BJT ⓘ Cross-Reference Search
3CD020 datasheet
3CD020 PNP B C D E F G H PCM TC=75 20 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 5 /W IC=0.5A V(BR)CBO ICB=1mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=1mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=1mA 4.0 V ICBO VCB=50 ... See More ⇒
Detailed specifications: MJW21191, MJW21192, MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 3CD010, S9014, 3CD030, 3CD050, 3CD075, 3CD1, 3CD100, 3CD1010, 3CD102, 3CD103
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