3CD050 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD050
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO257
3CD050 Transistor Equivalent Substitute - Cross-Reference Search
3CD050 Datasheet (PDF)
..1. Size:146K china
3cd050.pdf
3cd050.pdf
3CD050 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=2mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=2mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=2mA 4.0 V ICBO VCB=50V
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
