3CD050 Specs and Replacement

Type Designator: 3CD050

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO257

 3CD050 Substitution

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3CD050 datasheet

 ..1. Size:146K  china

 3cd050.pdf pdf_icon

3CD050

3CD050 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=2mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=2mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=2mA 4.0 V ICBO VCB=50V... See More ⇒

Detailed specifications: MJW21193G, MJW21194G, MJW21195G, MJW21196G, MJW3281AG, 3CD010, 3CD020, 3CD030, A733, 3CD075, 3CD1, 3CD100, 3CD1010, 3CD102, 3CD103, 3CD1094, 3CD1290

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