All Transistors. 3CD050 Datasheet

 

3CD050 Datasheet and Replacement


   Type Designator: 3CD050
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO257
      - BJT Cross-Reference Search

   

3CD050 Datasheet (PDF)

 ..1. Size:146K  china
 3cd050.pdf pdf_icon

3CD050

3CD050 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=2mA 50 80 100 120 150 200 250 V V(BR)CEO ICE=2mA 50 80 100 120 150 200 250 V V(BR)EBO IEB=2mA 4.0 V ICBO VCB=50V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: GN4L4M | 2T635A | DDA144EH | BDT64AF | MMS8550 | MJD200G | UN9110S

Keywords - 3CD050 transistor datasheet

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