3CD6125
Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD6125
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 2.5
MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO220
3CD6125
Transistor Equivalent Substitute - Cross-Reference Search
3CD6125
Datasheet (PDF)
..1. Size:347K lzg
3cd6125.pdf
2N6125(3CD6125) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61223DD6122 Features: Complement to 2N6122(3DD6122). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -60 V CBO V -60 V CEO V -5.0 V EB
8.1. Size:342K lzg
3cd6124.pdf
2N6124(3CD6124) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61213DD6121 Features: Complement to 2N6121(3DD6121). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -45 V CBO V -45 V CEO V -5.0 V EB
8.2. Size:344K lzg
3cd6126.pdf
2N6126(3CD6126) PNP /SILICON PNP TRANSISTOR Purpose: Medium power linear switching applications. 2N61233DD6123 Features: Complement to 2N6123(3DD6123). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -80 V CBO V -80 V CEO V -5.0 V EB
9.1. Size:142K china
3cd6109.pdf
3CD6 PNP B C D E F G H PCM TC=75 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 50 80 110 150 200 250 300 V V(BR)CEO ICE=5mA 50 80 110 150 200 250 300 V V(BR)EBO IEB=7mA 4.0 V ICBO VCB=20V
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