3CD834 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CD834
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO257
3CD834 Transistor Equivalent Substitute - Cross-Reference Search
3CD834 Datasheet (PDF)
3cd834.pdf
3CD834 PNP PCM TC=25 30 W ICM 3 A Tjm 175 Tstg -55~150 VCE=10V Rth 5 /W IC=1A V(BR)CBO ICB=1mA 60 V V(BR)CEO ICE=1mA 60 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.5 mA ICEO VCE=20V 1.0 mA IEBO VEB=5V 0.5 mA VBEsat 1.2 IC=
3cd834.pdf
isc Silicon PNP Power Transistor 3CD834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicationsABSOLUTE MAXIMUM RATIN
3cd837.pdf
3CD837 PNP PCM TC=25 30 W ICM 8.0 A Tjm 125 Tstg -55~150 VCE=10V Rth 5.0 /W IC=1A V(BR)CBO ICB=1mA 40 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=40V 0.5 mA ICEO VCE=18V 1.0 mA VBEsat 1.5 IC=2A V VCEsat IB=0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3715SMD
