3CF1 Specs and Replacement
Type Designator: 3CF1
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3CF1 Substitution
- BJT ⓘ Cross-Reference Search
3CF1 datasheet
Detailed specifications: 3CD6124, 3CD6125, 3CD6126, 3CD8, 3CD834, 3CD837, 3CD9, 3CD940, 2N4401, 3CF5, 3CG1, 3CG1013, 3CG1013T, 3CG1015, 3CG1015M, 3CG1018, 3CG102
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