3CF1 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CF1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
3CF1 Transistor Equivalent Substitute - Cross-Reference Search
3CF1 Datasheet (PDF)
..1. Size:123K china
3cf1.pdf
3cf1.pdf
3CD1(3CF1) PNP A B C D E F G PCM Tc=25 10 W ICM 1 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=1mA 30 60 100 150 200 250 300 V V(BR)CEO ICE=1mA 30 60 100 150 200 250 300 V V(BR)EBO IEB=1mA 4.0 V ICEO VCE=20V 1.5 mA VBEsat
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
