3CG102 Specs and Replacement

Type Designator: 3CG102

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 700 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

 3CG102 Substitution

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3CG102 datasheet

 ..1. Size:24K  shaanxi

3cg102.pdf pdf_icon

3CG102

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CG102 PNP Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a... See More ⇒

 0.1. Size:115K  china

3cg1020.pdf pdf_icon

3CG102

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 9.1. Size:118K  china

3cg1013.pdf pdf_icon

3CG102

3CG1013 PNP PCM TA=25 0.9 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A IEBO VEB=5V 0.5 A VBEsat 1.5 IC=500mA V IB=50mA ... See More ⇒

 9.2. Size:238K  lzg

3cg1015.pdf pdf_icon

3CG102

2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR , /Purpose Audio frequency general purpose, driver stage amplifier applications. , , h , , 2SC1815(3DG1815) FE Features High voltage and high current, excellent h linearity, low noise, FE complementary p... See More ⇒

Detailed specifications: 3CF1, 3CF5, 3CG1, 3CG1013, 3CG1013T, 3CG1015, 3CG1015M, 3CG1018, 2SC2240, 3CG1020, 3CG1030, 3CG1030A, 3CG1036K, 3CG1037AK, 3CG1048, 3CG1091, 3CG110

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