3CG1198K Specs and Replacement
Type Designator: 3CG1198K
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
- BJT ⓘ Cross-Reference Search
3CG1198K datasheet
..1. Size:267K lzg
3cg1198k.pdf 
2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1782K(3DG1782K) Features High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) /Absolute maximum ratings(Ta=25 ) Sym... See More ⇒
8.1. Size:230K lzg
3cg1197k.pdf
2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier applications. , 2SD1781K(3DG1781K) Features Low V ,complements the 2SD1781K(3DG1781K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 ... See More ⇒
9.1. Size:133K china
3cg110.pdf
3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.... See More ⇒
9.2. Size:112K china
3cg1124.pdf
3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5... See More ⇒
9.3. Size:132K china
3cg112.pdf
3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0... See More ⇒
9.4. Size:103K china
3cg114b.pdf
3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V... See More ⇒
9.5. Size:132K china
3cg111.pdf
3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.... See More ⇒
9.6. Size:218K lzg
3cg1128.pdf
2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency output amplifier. , 2SC1788(3DG1788) Features low V ,complementary pair with 2SC1788(3DG1788). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO... See More ⇒
9.7. Size:381K lzg
3cg1132.pdf
2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V ... See More ⇒
9.8. Size:239K lzg
3cg1160.pdf
2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 ) ... See More ⇒
9.9. Size:262K lzg
3cg1189.pdf
2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1767(3DG1767) Features Low V complements the 2SD1767(3DG1767). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -80 V CBO V -80 V C... See More ⇒
9.10. Size:292K lzg
3cg1188.pdf
2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1766(3DG1766) Features Low V complements the 2SD1766(3DG1766). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V C... See More ⇒
9.11. Size:415K lzg
3cg1175.pdf
2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of audio frequency amplifier. , , 2SC2785(3DG2785) Features High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒
9.12. Size:219K lzg
3cg1182.pdf
2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1758(3DG1758) Features Low V complements the 2SD1758(3DG1758). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V ... See More ⇒
9.13. Size:268K lzg
3cg1162.pdf
2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency general purpose amplifier applications. , , , , 2SC2712(3DG2712) Features High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3... See More ⇒
Detailed specifications: 3CG114B, 3CG1160, 3CG1162, 3CG1175, 3CG1182, 3CG1188, 3CG1189, 3CG1197K, BDT88, 3CG12, 3CG12, 3CG1201, 3CG1203, 3CG1213, 3CG1218A, 3CG1260, 3CG1283
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