3CG1317 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG1317
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92S
3CG1317 Transistor Equivalent Substitute - Cross-Reference Search
3CG1317 Datasheet (PDF)
3cg1317.pdf
2SA1317(3CG1317) PNP /SILION PNP TRANSISTOR : Purpose: Capable of being used in the low frequency to high frequency range. :/Features: Large current capacity and wide ASO. /Absolute maximum ratings(Ta=25) Symbol Rating Unit
3cg131.pdf
3CG131 PNP A B C D E PCM Tc=75 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 15 30 45 60 75 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1.0 A IEBO VE
3cg1316.pdf
2SA1316(3CG1316) PNP /SILICON PNP TRANSISTOR : Purpose: Low noise audio amplifier applications. :,, 2SC3329(3DG3329) Features: Low rbb, low noise figure, complementary pair with 2SC3329(3DG3329). /Absolute maximum ratings(Ta=25)
3cg130.pdf
3CG130 PNP A B C D E F G PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.5 A ICEO VCE=10V 1
3cg1386.pdf
2SB1386(3CG1386) PNP /SILICON PNP TRANSISTOR : Purpose: General power amplifier applications. ,, 2SD2098(3DG2098) Features: Low V , excellent DC current gain , complements the 2SD2098(3DG2098). CE(sat)/Absolute maximum ratings(Ta=25)
3cg1376.pdf
2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : Purpose: General purpose amplifier applications requiring high breakdown voltages. : , 2SC3478(3DG3478) Features: High breakdown voltage, good h linearity, complementary to 2SC3478(3DG3478). FE/Absolute maxi
3cg1365.pdf
2SA1365(3CG1365) PNP /SILICON PNP TRANSISTOR : Purpose: Small type motor drive, relay drive, power supply. : Features: Low collector to emitter saturation voltage, excellent linearity of DC forward curren
3cg1320.pdf
2SA1320(3CG1320) PNP /SILICON PNP TRANSISTOR :, Purpose: High voltage switching, color TV chroma output applications . /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -250 V CBO V -250 V CEO V -5.0 V EBO I -50 mA CI -100 mA CPI -20 mA BP 600 mW
3cg1300.pdf
2SA1300(3CG1300) PNP /SILION PNP TRANSISTOR :, Purpose: Strobo flash, medium power amplifier applications. : Features: High DC current gain, excellent h linearity, low saturation voltage. FE/Absolute maximum ratings(Ta=25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CP750 | BC556BBK | BCW27 | 2SB1021
