All Transistors. 3CG2907 Datasheet

 

3CG2907 Datasheet and Replacement


   Type Designator: 3CG2907
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO18
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3CG2907 Datasheet (PDF)

 ..1. Size:116K  china
 3cg2907.pdf pdf_icon

3CG2907

3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat

 0.1. Size:129K  china
 3cg2907a.pdf pdf_icon

3CG2907

3CG2907A(BT2907A) PNP PCM TA=25 225 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.01 A IEBO VEB=5.0V 0.1 A VBEsat 0.4 IC=150mA V IB=15mA VCEsat

 8.1. Size:112K  china
 3cg2905.pdf pdf_icon

3CG2907

3CG2905 PNP PCM TA=25 600 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 40 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.02 A IC=150mA VCEsat 0.4 V IB=15mA VCE=10V hFE 35 IC=1mA VCE=5V

 9.1. Size:97K  foshan
 3cg298.pdf pdf_icon

3CG2907

2SA298(3CG298) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h , FEFeatures: High voltage and high current, excellent h linearity, low noise. FE/Absolute maximum ratings(Ta=25)

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History: KTA1759 | 2SC1740S-Q | BD612 | 2PC4617RM | 2N3730 | 2SB76 | BLX20

Keywords - 3CG2907 transistor datasheet

 3CG2907 cross reference
 3CG2907 equivalent finder
 3CG2907 lookup
 3CG2907 substitution
 3CG2907 replacement

 

 
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