3CG298 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3CG298
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO92
3CG298 Transistor Equivalent Substitute - Cross-Reference Search
3CG298 Datasheet (PDF)
3cg298.pdf
2SA298(3CG298) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, h , FEFeatures: High voltage and high current, excellent h linearity, low noise. FE/Absolute maximum ratings(Ta=25)
3cg2907a.pdf
3CG2907A(BT2907A) PNP PCM TA=25 225 mW ICM 600 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.01 A IEBO VEB=5.0V 0.1 A VBEsat 0.4 IC=150mA V IB=15mA VCEsat
3cg2905.pdf
3CG2905 PNP PCM TA=25 600 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 40 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=50V 0.02 A IC=150mA VCEsat 0.4 V IB=15mA VCE=10V hFE 35 IC=1mA VCE=5V
3cg2907.pdf
3CG2907 PNP PCM 400 mW ICM 600 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 65 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.2 A ICEO VCE=10V 0.5 A IEBO VEB=2V 0.2 A VBEsat 1.0 IC=30mA V IB=3mA VCEsat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3691 | 2SD1616AG | 2SC2358
