All Transistors. 3CK050 Datasheet

 

3CK050 Datasheet and Replacement


   Type Designator: 3CK050
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO276AB TO257
      - BJT Cross-Reference Search

   

3CK050 Datasheet (PDF)

 ..1. Size:144K  china
 3ck050.pdf pdf_icon

3CK050

3CK050 PNP A B C D E F PCM TC=25 50 W ICM 5 A Tjm 175 Tstg -55~150 VCE=10V Rth 3 /W IC=1.5A V(BR)CBO ICB=1mA 25 50 100 150 200 250 V V(BR)CEO ICE=1mA 25 50 100 150 200 250 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA

 9.1. Size:113K  china
 3ck05.pdf pdf_icon

3CK050

3CK05 PNP A B C D E PCM Tc=25 50 W ICM 5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA V V(BR)CEO ICE=0.1mA 30 40 60 80 80 V V(BR)EBO IEB=10mA 5 V ICEO VCE=20V 2 A VBEsat IC=2.5A V IB=0.25A VCEsat 0.6 VCE=4V hFE 20

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History: 2N2904 | ECG185 | ECG332 | DTC124EEB | 2N5784 | 2SA1488 | NXP3875G

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