All Transistors. 3CK10 Datasheet

 

3CK10 Datasheet and Replacement


   Type Designator: 3CK10
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search

   

3CK10 Datasheet (PDF)

 ..1. Size:130K  china
 3ck10.pdf pdf_icon

3CK10

3CK10 PNP A B C D E F PCM TC=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.5mA 25 35 40 35 45 55 V V(BR)CEO ICE=0.5mA 20 30 35 30 40 50 V V(BR)EBO IEB=0.5mA 4.0 V ICBO VCB=10V 10 A ICEO VCE=10V 20 A I

 0.1. Size:129K  china
 3ck104.pdf pdf_icon

3CK10

3CK104 PNP B C D E F TC25 15 TC=75 10 W Ptot TC25 0.1 W/ TC25 0.75 TC25 0.005 ICM 3/1 A IB 0.5 Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.5mA 50 80 110 150 200 V ICE=1mA V(BR)CEO 50 80

 0.2. Size:192K  china
 3ck100.pdf pdf_icon

3CK10

3CK100 PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 25 50 100 150 200 250 V V(BR)CEO ICE=5mA 25 50 100 150 200 250 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT4122 | 2SC3418 | 2SA1051A | 2SA843 | 2N6197 | 2SB464 | 2N1963

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