3CK10 Specs and Replacement
Type Designator: 3CK10
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3CK10 Substitution
- BJT ⓘ Cross-Reference Search
3CK10 datasheet
3CK10 PNP A B C D E F PCM TC=25 1 W ICM 1 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.5mA 25 35 40 35 45 55 V V(BR)CEO ICE=0.5mA 20 30 35 30 40 50 V V(BR)EBO IEB=0.5mA 4.0 V ICBO VCB=10V 10 A ICEO VCE=10V 20 A I... See More ⇒
3CK100 PNP A B C D E F PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 25 50 100 150 200 250 V V(BR)CEO ICE=5mA 25 50 100 150 200 250 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=20V 1.0 mA... See More ⇒
Detailed specifications: 3CG965, 3CG966, 3CG966T, 3CG970, 3CK005, 3CK010, 3CK05, 3CK050, TIP122, 3CK100, 3CK104, 3CK110, 3CK117, 3CK120, 3CK1216, 3CK130, 3CK2
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