3CK9 Specs and Replacement
Type Designator: 3CK9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3CK9 Substitution
- BJT ⓘ Cross-Reference Search
3CK9 datasheet
3CK9 PNP A B C D E F G H PCM 700 mW ICM 700 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 60 70 80 90 V V(BR)CEO ICE=0.1mA 15 20 35 45 55 65 75 85 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 10 A ICEO VCE=10V... See More ⇒
Detailed specifications: 3CK130, 3CK2, 3CK3, 3CK301, 3CK304, 3CK35, 3CK4, 3CK5323, 2SD1047, 3DD03T, 3DD04T, 3DD05, 3DD05T, 3DD1, 3DD10, 3DD100, 3DD101
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