3DD128FH8D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD128FH8D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220AB
3DD128FH8D Transistor Equivalent Substitute - Cross-Reference Search
3DD128FH8D Datasheet (PDF)
3dd128fh8d.pdf
NPN R 3DD128F H8D 3DD128F H8D VCEO 200 V NPN IC 3.5 A Ptot TC=25 60 W
3dd128fh6d.pdf
NPN R 3DD128F H6D 3DD128F H6D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W
3dd128fh5d.pdf
NPN R 3DD128F H5D 3DD128F H5D VCEO 200 V NPN IC 3.5 A Ptot TC=25 50 W
3dd128fh3d.pdf
NPN R 3DD128F H3D 3DD128F H3D VCEO 200 V NPN IC 3.5 A Ptot TC=25 40 W
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .