All Transistors. 3DD13001A1 Datasheet

 

3DD13001A1 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD13001A1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO92

3DD13001A1 Transistor Equivalent Substitute - Cross-Reference Search

3DD13001A1 Datasheet (PDF)

1.1. 3dd13001a1.pdf Size:182K _china

3DD13001A1
3DD13001A1

硅三重扩散 NPN 双极型晶体管 R ○ 3DD13001 A1 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13001 A1 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 400 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 0.25 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (Ta=25℃) 0.8 W 结

2.1. 3dd13001.pdf Size:529K _secos

3DD13001A1
3DD13001A1

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E C F Range 17~23 20~26 G H 1Base 1 1 1 3 2Collector 2 2 2 Emitter 3Emitter 3 3 3 J

2.2. 3dd13001.pdf Size:222K _lge

3DD13001A1
3DD13001A1

3DD13001(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 3. EMITTER 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector -Base Voltage 600 V 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67 VEBO Emi

2.3. 3dd13001_a1.pdf Size:182K _crhj

3DD13001A1
3DD13001A1

硅三重扩散 NPN 双极型晶体管 R ○ 3DD13001 A1 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13001 A1 是硅 NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 400 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 0.25 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (Ta=25℃) 0.8 W 结

2.4. 3dd13001p.pdf Size:182K _china

3DD13001A1
3DD13001A1

硅三重扩散 NPN 双极型晶体管 R ○ 3DD13001 P 产品概述 特征参数 产品特点 ● 开关损耗低 3DD13001 P 是硅NPN 符 号 额定值 单 位 ● 反向漏电流小 VCEO 400 V 型功率开关晶体管, 该产品 ● 高温特性好 IC 0.17 A 采用平面工艺, 分压环终端 ● 合适的开关速度 Ptot (Ta=25℃) 0.6 W 结构

2.5. 3dd13001.pdf Size:590K _kexin

3DD13001A1
3DD13001A1

SMD Type Transistors NPN Transistors 3DD13001 ■ Features 1.70 0.1 ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -

Datasheet: 3DD127D5 , 3DD128A8D , 3DD128FA7D , 3DD128FH3D , 3DD128FH5D , 3DD128FH6D , 3DD128FH8D , 3DD128Y8D , SS8050 , 3DD13001P , 3DD13001P1 , 3DD13002B1 , 3DD13002B1-7 , 3DD13002B1D , 3DD13002R1D , 3DD13002RUD , 3DD13003E6D .

 


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