3DD13001P Datasheet and Replacement
Type Designator: 3DD13001P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO92
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3DD13001P Datasheet (PDF)
3dd13001p.pdf

NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W
3dd13001p1.pdf

NPN R 3DD13001 P1 3DD13001 P1 NPN VCEO 400 V IC 0.2 A Ptot Ta=25 0.6 W
3dd13001.pdf

3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications ADBCLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E CFRange 17~23 20~26 G H1Base 1113 2Collector 222Emitter 3Emitter 333
3dd13001b.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 1300113001=Device code S 6B S 6B=Code 1ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/BagB-TA
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | KTC4370 | MG15G6EL1 | 3DD4244DR | MUN2233 | RN1909 | KT816A-2
Keywords - 3DD13001P transistor datasheet
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History: NTE2547 | KTC4370 | MG15G6EL1 | 3DD4244DR | MUN2233 | RN1909 | KT816A-2



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