3DD13003S1D PDF and Equivalents Search

 

3DD13003S1D Specs and Replacement

Type Designator: 3DD13003S1D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO92

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3DD13003S1D datasheet

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3DD13003S1D

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3DD13003S1D

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2... See More ⇒

 6.2. Size:711K  jiangsu

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3DD13003S1D

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER 2. COLLECTOR FEATURES 3. BASE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Vol... See More ⇒

Detailed specifications: 3DD13003H6D, 3DD13003H8D, 3DD13003J6D, 3DD13003J8D, 3DD13003K6, 3DD13003K8, 3DD13003M6D, 3DD13003M8D, BC556, 3DD13003SUD, 3DD13003U1D, 3DD13003U3D, 3DD13003U6D, 3DD13003V1D, 3DD13003V6D, 3DD13003VUD, 3DD13003W3D

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