3DD21 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD21
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DD21 Transistor Equivalent Substitute - Cross-Reference Search
3DD21 Datasheet (PDF)
..1. Size:151K china
3dd21.pdf
3dd21.pdf
3DD21 NPN A B C D E F PCM TC=75 10 W ICM 0.6 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.2A V(BR)CBO ICB=1mA 150 250 400 500 600 700 V V(BR)CEO ICE=1mA 100 200 300 400 500 600 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCB=50V 0.2
0.1. Size:146K jilin sino
3dd2102.pdf
3dd2102.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY R3DD2102 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BV CBO6 A I C5 V(max) V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
