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3DD3015A1 Specs and Replacement

Type Designator: 3DD3015A1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92

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3DD3015A1 datasheet

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3DD3015A1

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W ... See More ⇒

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3DD3015A1

NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W ... See More ⇒

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Detailed specifications: 3DD260, 3DD262, 3DD264, 3DD2655, 3DD267, 3DD271, 3DD275, 3DD3, TIP42, 3DD3015A3, 3DD3020A3, 3DD3020A4, 3DD3020A6, 3DD3040A1, 3DD3040A3, 3DD3040A4, 3DD3040A6

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