3DD4020A6D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD4020A6D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO126
3DD4020A6D Transistor Equivalent Substitute - Cross-Reference Search
3DD4020A6D Datasheet (PDF)
3dd4020a6d.pdf
NPN R 3DD4020 A6D 3DD4020 A6D NPN VCEO 400 V IC 2 A Ptot W TC=25 50
3dd4013a6d.pdf
NPN R 3DD4013 A6D 3DD4013 A6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
3dd4013 a1d.pdf
NPN R 3DD4013 A1D 3DD4013 A1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
3dd4013 b1d.pdf
NPN R 3DD4013 B1D 3DD4013 B1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
3dd4013 a6d.pdf
NPN R 3DD4013 A6D 3DD4013 A6D VCEO 400 V NPN IC 1.3 A Ptot Tc=25 40 W
3dd4013b1d.pdf
NPN R 3DD4013 B1D 3DD4013 B1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
3dd4013a1d.pdf
NPN R 3DD4013 A1D 3DD4013 A1D VCEO 400 V NPN IC 1.3 A Ptot Ta=25 0.8 W
3dd401.pdf
isc Silicon NPN Power Transistor 3DD401DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
