3DD4A Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD4A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DD4A Transistor Equivalent Substitute - Cross-Reference Search
3DD4A Datasheet (PDF)
..1. Size:168K china
3dd4a.pdf
3dd4a.pdf
3DD4AF-T NPN A B C D E F PCM Tc=75 10 W ICM 1.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 10 /W IC=0.3A V(BR)CBO ICB=1mA 100 150 200 250 300 350 V V(BR)CEO ICE=1mA 50 100 150 200 250 300 V V(BR)EBO IEB=0.5mA 5.0 V ICBO VCE=50V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
