All Transistors. 3DD512 Datasheet

 

3DD512 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD512

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 220 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3

3DD512 Transistor Equivalent Substitute - Cross-Reference Search

 

3DD512 Datasheet (PDF)

1.1. 3dd512.pdf Size:34K _china

3DD512

Shaanxi Qunli Electric Co., Ltd 11:53:05 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD512,3DD515 NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequen

5.1. 3dd510.pdf Size:36K _china

3DD512

Shaanxi Qunli Electric Co., Ltd 11:53:31 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD510,3DD511,DD04,DD05 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustme

5.2. 3dd511.pdf Size:23K _china

3DD512

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD511 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop.Good output character. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, power amplify, power adjustment. 4. Quality Class: JP, JT, JCT, GS,

 5.3. 3dd515.pdf Size:23K _china

3DD512

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD515 NPN Silicon Low Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch, low frequency power amplify, power adjustm

5.4. 3dd51.pdf Size:153K _china

3DD512

3DD50/3DD51 型 NPN 硅低频大功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F PCM TC=75℃ 1 W ICM 1 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 100 ℃/W IC=0.1A V(BR)CBO ICB=1mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)CEO ICE=1mA ≥30 ≥50 ≥80 ≥110 ≥150 ≥200 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=20V ≤0.2 mA

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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