All Transistors. 3DD63 Datasheet

 

3DD63 Datasheet and Replacement


   Type Designator: 3DD63
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO276AB TO220 TO257
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3DD63 Datasheet (PDF)

 ..1. Size:151K  china
 3dd63.pdf pdf_icon

3DD63

3DD62/3DD63/3DD64 NPN A B C D E F PCM TC=75 50 W ICM 7.5 A Tjm 175 Tstg -55~150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=7mA 30 50 80 110 150 200 V V(BR)CEO ICE=7mA 30 50 80 110 150 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=20V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | 3DD810 | LDTA115EET1G | KSA643Y | PHPT60406NY | 1DI300Z-120 | CS9011I

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