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3DD831 Specs and Replacement

Type Designator: 3DD831

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO276AB TO220 TO257

 3DD831 Substitution

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3DD831 datasheet

 ..1. Size:148K  china

 3dd831.pdf pdf_icon

3DD831

3DD831 NPN PCM TC=75 5 W ICM 2 A Tjm 175 Tstg -55 150 VCE=10V Rth 20 /W IC=0.2A V(BR)CBO ICB=1mA 50 V V(BR)CEO ICE=1mA 45 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=50V 0.5 mA ICEO VCE=30V 1.0 mA IEBO VEB=4V 0.5 mA VBEsat 1.2 IC... See More ⇒

Detailed specifications: 3DD73, 3DD741A4, 3DD741A8, 3DD742A8, 3DD7525A3, 3DD8, 3DD810, 3DD820, BD335, 3DD8E, 3DD9, 3DD99, 3DD9D, 3DD9E, 3DF05, 3DF1, 3DF5

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