All Transistors. 3DD831 Datasheet

 

3DD831 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DD831

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO276AB_TO220_TO257

3DD831 Transistor Equivalent Substitute - Cross-Reference Search

3DD831 Datasheet (PDF)

1.1. 3dd831.pdf Size:148K _china

3DD831

3DD831 型 NPN 硅低频大功率晶体管 参数符号 测试条件 规范值 单位 PCM TC=75℃ 5 W ICM 2 A 极 Tjm 175 ℃ 限 Tstg -55~150 ℃ 值 VCE=10V Rth 20 ℃/W IC=0.2A V(BR)CBO ICB=1mA ≥50 V V(BR)CEO ICE=1mA ≥45 V V(BR)EBO IEB=1mA ≥5.0 V ICBO VCB=50V ≤0.5 mA 直 流 ICEO VCE=30V ≤1.0 mA 参 IEBO VEB=4V ≤0.5 mA 数 VBEsat ≤1.2 IC

Datasheet: 3DD73 , 3DD741A4 , 3DD741A8 , 3DD742A8 , 3DD7525A3 , 3DD8 , 3DD810 , 3DD820 , S9013 , 3DD8E , 3DD9 , 3DD99 , 3DD9D , 3DD9E , 3DF05 , 3DF1 , 3DF5 .

 


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