3DF5 Specs and Replacement
Type Designator: 3DF5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
3DF5 Substitution
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3DF5 datasheet
3DD5(3DF5) NPN A B C D E F G PCM Tc=75 50 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2 /W IC=1.5A V(BR)CBO ICB=5mA 80 150 200 250 350 450 600 V V(BR)CEO ICE=5mA 50 110 150 200 250 300 400 V V(BR)EBO IEB=1mA 6.0 V ICBO VC... See More ⇒
isc Silicon NPN Power Transistor 3DF5B DESCRIPTION With TO-3 packaging Excellent Safe Operating Area DC Current Gain- h =15(Min)@I = 2.5A FE C Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 2.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid... See More ⇒
Detailed specifications: 3DD831, 3DD8E, 3DD9, 3DD99, 3DD9D, 3DD9E, 3DF05, 3DF1, BC558, 3DG100, 3DG1009A, 3DG101, 3DG102, 3DG103, 3DG1047, 3DG110, 3DG111
Keywords - 3DF5 pdf specs
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