3DG117B Specs and Replacement
Type Designator: 3DG117B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
3DG117B Substitution
- BJT ⓘ Cross-Reference Search
3DG117B datasheet
3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55 175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V ... See More ⇒
3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
3DG114B NPN PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VC... See More ⇒
Detailed specifications: 3DG102, 3DG103, 3DG1047, 3DG110, 3DG111, 3DG112, 3DG114B, 3DG1162, A1013, 3DG12, 3DG120, 3DG121, 3DG1213, 3DG1213A, 3DG122, 3DG123S, 3DG130
Keywords - 3DG117B pdf specs
3DG117B cross reference
3DG117B equivalent finder
3DG117B pdf lookup
3DG117B substitution
3DG117B replacement
