3DG121 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG121
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO18
3DG121 Transistor Equivalent Substitute - Cross-Reference Search
3DG121 Datasheet (PDF)
3dg121.pdf
3DG121 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.5 A IEBO VEB=1.5V 0.1 A
3dg1213a.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
3dg1213.pdf
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR :/Purpose: Low frequency amplifier applications . : 2SA673(3CG673)/2SA673A(3CG673A) Features: Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit 2SC1
3dg12.pdf
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A
3dg120.pdf
3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A
3dg122.pdf
3DG122 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.2 A IEBO VEB=1.5V 0.1 A
3dg123s.pdf
STD123S(3DG123S) NPN /SILICON NPN TRANSISTOR : Purpose: Low voltage large current drivers. : , Features: Low collector saturation voltage, high DC current gain, large current capability. /Absolute maximum ratings(Ta=25) Symbol
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: S671T
