3DG1213 Specs and Replacement
Type Designator: 3DG1213
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
3DG1213 Substitution
- BJT ⓘ Cross-Reference Search
3DG1213 datasheet
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier applications . 2SA673(3CG673)/2SA673A(3CG673A) Features Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SC1... See More ⇒
2SC1213(3DG1213) 2SC1213A(3DG1213A) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency amplifier applications . 2SA673(3CG673)/2SA673A(3CG673A) Features Complementary pair with 2SA673(3CG673)/2SA673A(3CG673A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit 2SC1... See More ⇒
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A ... See More ⇒
Detailed specifications: 3DG111, 3DG112, 3DG114B, 3DG1162, 3DG117B, 3DG12, 3DG120, 3DG121, D880, 3DG1213A, 3DG122, 3DG123S, 3DG130, 3DG1317, 3DG1318, 3DG140, 3DG1417
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