All Transistors. 3DG123S Datasheet

 

3DG123S Datasheet and Replacement


   Type Designator: 3DG123S
   SMD Transistor Code: H123
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 6.5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT23
 

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3DG123S Datasheet (PDF)

 ..1. Size:213K  lzg
 3dg123s.pdf pdf_icon

3DG123S

STD123S(3DG123S) NPN /SILICON NPN TRANSISTOR : Purpose: Low voltage large current drivers. : , Features: Low collector saturation voltage, high DC current gain, large current capability. /Absolute maximum ratings(Ta=25) Symbol

 9.1. Size:119K  china
 3dg12.pdf pdf_icon

3DG123S

3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A

 9.2. Size:119K  china
 3dg120.pdf pdf_icon

3DG123S

3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A

 9.3. Size:120K  china
 3dg121.pdf pdf_icon

3DG123S

3DG121 NPN A B C D PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.5 A IEBO VEB=1.5V 0.1 A

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Datasheet: 3DG1162 , 3DG117B , 3DG12 , 3DG120 , 3DG121 , 3DG1213 , 3DG1213A , 3DG122 , D880 , 3DG130 , 3DG1317 , 3DG1318 , 3DG140 , 3DG1417 , 3DG142 , 3DG1473 , 3DG1473A .

History: MQ5130 | 2SC34 | BF872A | S8550DA

Keywords - 3DG123S transistor datasheet

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