3DG123S Specs and Replacement
Type Designator: 3DG123S
SMD Transistor Code: H123
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 6.5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOT23
3DG123S Substitution
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3DG123S datasheet
STD123S(3DG123S) NPN /SILICON NPN TRANSISTOR Purpose Low voltage large current drivers. , Features Low collector saturation voltage, high DC current gain, large current capability. /Absolute maximum ratings(Ta=25 ) Symbol ... See More ⇒
3DG12 NPN A B C D PCM 700 mW ICM 300 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 100 140 V V(BR)CEO ICE=0.1mA 30 50 80 120 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 1.0 A ICEO VCE=10V 1.0 A IEBO VEB=1.5V 0.5 A ... See More ⇒
3DG120 NPN A B C D PCM 500 mW ICM 150 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 40 60 40 60 V V(BR)CEO ICE=0.1mA 30 45 30 45 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.05 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.05 A ... See More ⇒
Detailed specifications: 3DG1162, 3DG117B, 3DG12, 3DG120, 3DG121, 3DG1213, 3DG1213A, 3DG122, 2N4401, 3DG130, 3DG1317, 3DG1318, 3DG140, 3DG1417, 3DG142, 3DG1473, 3DG1473A
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