All Transistors. 3DG140 Datasheet

 

3DG140 Datasheet and Replacement


   Type Designator: 3DG140
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.015 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
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3DG140 Datasheet (PDF)

 ..1. Size:23K  shaanxi
 3dg140.pdf pdf_icon

3DG140

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a

 9.1. Size:127K  china
 3dg142.pdf pdf_icon

3DG140

3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.2. Size:146K  foshan
 3dg1473.pdf pdf_icon

3DG140

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb

 9.3. Size:146K  foshan
 3dg1473a.pdf pdf_icon

3DG140

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb

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History: H380TM | DTA144WA3 | 2SD2395 | BCV29 | 2SD1928 | 2SC1352F

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