3DG140 Specs and Replacement
Type Designator: 3DG140
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
3DG140 Substitution
- BJT ⓘ Cross-Reference Search
3DG140 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG140 NPN Silicon High Frequency Low Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source a... See More ⇒
3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A ... See More ⇒
2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb... See More ⇒
2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR Purpose General amplifier applications. , f , 2SA1018(3CG1018) T Features High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25 ) Symb... See More ⇒
Detailed specifications: 3DG121, 3DG1213, 3DG1213A, 3DG122, 3DG123S, 3DG130, 3DG1317, 3DG1318, D965, 3DG1417, 3DG142, 3DG1473, 3DG1473A, 3DG150, 3DG160, 3DG161, 3DG162
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