All Transistors. 3DG1417 Datasheet

 

3DG1417 Datasheet and Replacement


   Type Designator: 3DG1417
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 1.4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92
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3DG1417 Datasheet (PDF)

 ..1. Size:179K  lzg
 3dg1417.pdf pdf_icon

3DG1417

2SC1417(3DG1417) NPN /SILICON NPN TRANSISTOR /Purpose: High frequency amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 15 V CEO V 3.0 V EBO I 30 mA C P 100 mW C T 150 j T -55150 stg /Electrical characteristics(Ta=25

 9.1. Size:127K  china
 3dg142.pdf pdf_icon

3DG1417

3DG142 NPN A B C D PCM 100 mW ICM 15 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 35 50 65 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A

 9.2. Size:146K  foshan
 3dg1473.pdf pdf_icon

3DG1417

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb

 9.3. Size:146K  foshan
 3dg1473a.pdf pdf_icon

3DG1417

2SC1473(3DG1473) 2SC1473A(3DG1473A) NPN /SILICON NPN TRANSISTOR : Purpose: General amplifier applications. :, f , 2SA1018(3CG1018) TFeatures: High V , high f ,Complementary pair with 2SA1018(3CG1018). CEO T /Absolute maximum ratings(Ta=25) Symb

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History: FMMT723 | 2N3322 | CSC3329GR | BUT93 | FJNS4202R | DDTA143XCA | 2N1986

Keywords - 3DG1417 transistor datasheet

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