3DG1809 Specs and Replacement
Type Designator: 3DG1809
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 39
Package: TO92
3DG1809 Substitution
- BJT ⓘ Cross-Reference Search
3DG1809 datasheet
2SC1809(3DG1809) NPN /SILICON NPN TRANSISTOR Purpose FM radio RF amplifier applications. f T Features High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. /A... See More ⇒
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat... See More ⇒
3DG183 NPN A B C D E PCM TA=25 700 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 300 350 400 450 500 V V(BR)CEO ICE=0.1mA 300 350 400 450 500 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 2.0 A IE... See More ⇒
Detailed specifications: 3DG1627A, 3DG1627AF, 3DG1675, 3DG1740M, 3DG1740S, 3DG1741AM, 3DG1741S, 3DG180, MJE350, 3DG181, 3DG1815, 3DG1815M, 3DG182, 3DG183, 3DG1859, 3DG1906, 3DG1921
Keywords - 3DG1809 pdf specs
3DG1809 cross reference
3DG1809 equivalent finder
3DG1809 pdf lookup
3DG1809 substitution
3DG1809 replacement








