All Transistors. 3DG1859 Datasheet

 

3DG1859 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG1859

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

3DG1859 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG1859 Datasheet (PDF)

1.1. 3dg1859.pdf Size:307K _lzg

3DG1859
3DG1859

2SC1859(3DG1859) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:高电压,大电流,与 2SB1238(3CA1238)互补。 Features: High breakdown voltage,high current,complementary pair with 2SB1238(3CA1238). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol R

5.1. 3dg183.pdf Size:119K _china

3DG1859

3DG183 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TA=25℃ 700 mW ICM 100 mA 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥300 ≥350 ≥400 ≥450 ≥500 V V(BR)CEO ICE=0.1mA ≥300 ≥350 ≥400 ≥450 ≥500 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=30V ≤1.0 μA 直 ICEO VCE=30V ≤2.0 μA 流 IE

5.2. 3dg182.pdf Size:121K _china

3DG1859

3DG182 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM 700 mW ICM 300 mA 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)CEO ICE=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=30V ≤1.0 μA 直 ICEO VCE=30V ≤2.0 μA 流 IEBO VEB=2V

 5.3. 3dg1809.pdf Size:124K _foshan

3DG1859
3DG1859

2SC1809(3DG1809) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于调频收音机射频放大。 Purpose: FM radio RF amplifier applications. 特点:f 高,低电容输出,基极时间常数小和增益高,极好的噪声特性。 T Features: High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. 极限参数/A

5.4. 3dg1815.pdf Size:234K _foshan

3DG1859
3DG1859

2SC1815(3DG1815) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大,激励级放大。 Purpose: Audio frequency general purpose ,driver stage amplifier applications. 特点:耐压高,电流大,有极好的 h 特性,低噪声系数,可与 2SA1015(3CG1015)互补。 FE Features: High voltage and high current, excellent h linearity ,low noise ,complementary FE p

 5.5. 3dg1815m.pdf Size:387K _foshan

3DG1859
3DG1859

2SC1815M(3DG1815M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通低频放大,激励级放大。/Purpose: Audio frequency general purpose, driver stage amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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