All Transistors. 3DG1859 Datasheet

 

3DG1859 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG1859

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO92

3DG1859 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG1859 Datasheet (PDF)

1.1. 3dg1859.pdf Size:307K _china

3DG1859
3DG1859

2SC1859(3DG1859) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:高电压,大电流,与 2SB1238(3CA1238)互补。 Features: High breakdown voltage,high current,complementary pair with 2SB1238(3CA1238). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol R

5.1. 3dg183.pdf Size:119K _china

3DG1859

3DG183 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM TA=25℃ 700 mW ICM 100 mA 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥300 ≥350 ≥400 ≥450 ≥500 V V(BR)CEO ICE=0.1mA ≥300 ≥350 ≥400 ≥450 ≥500 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=30V ≤1.0 μA 直 ICEO VCE=30V ≤2.0 μA 流 IE

5.2. 3dg1809.pdf Size:124K _china

3DG1859
3DG1859

2SC1809(3DG1809) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于调频收音机射频放大。 Purpose: FM radio RF amplifier applications. 特点:f 高,低电容输出,基极时间常数小和增益高,极好的噪声特性。 T Features: High f , low output capacitance, low base time constant and high gain, T excellent noise characteristics. 极限参数/A

 5.3. 3dg180.pdf Size:26K _china

3DG1859

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG180 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplificat

5.4. 3dg182.pdf Size:121K _china

3DG1859

3DG182 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E PCM 700 mW ICM 300 mA 极 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)CEO ICE=0.1mA ≥60 ≥100 ≥140 ≥180 ≥220 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=30V ≤1.0 μA 直 ICEO VCE=30V ≤2.0 μA 流 IEBO VEB=2V

 5.5. 3dg1815.pdf Size:234K _china

3DG1859
3DG1859

2SC1815(3DG1815) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频放大,激励级放大。 Purpose: Audio frequency general purpose ,driver stage amplifier applications. 特点:耐压高,电流大,有极好的 h 特性,低噪声系数,可与 2SA1015(3CG1015)互补。 FE Features: High voltage and high current, excellent h linearity ,low noise ,complementary FE p

5.6. 3dg181.pdf Size:32K _china

3DG1859

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG181, 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal am

5.7. 3dg1815m.pdf Size:387K _china

3DG1859
3DG1859

2SC1815M(3DG1815M) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通低频放大,激励级放大。/Purpose: Audio frequency general purpose, driver stage amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 60 V CBO V 50 V CEO V 5.0 V EBO I 150 mA C I 50 mA B P 300 mW C T

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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