3DG1923 Specs and Replacement
Type Designator: 3DG1923
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 550 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
3DG1923 Substitution
- BJT ⓘ Cross-Reference Search
3DG1923 datasheet
2SC1923(3DG1923) NPN /SILICON NPN TRANSISTOR ,FM , Purpose High frequency, FM,RF,MIX,IF amplifier applications. , Features Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25 ) Symbol Ratin... See More ⇒
2SC1921(3DG1921) NPN /SILICON NPN TRANSISTOR , , Purpose High frequency high voltage amplifier, video output. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 250 V CBO V 200 V CEO V 5.0 V EBO I 50 mA C P 600 mW C T 150 j T -55 150 st... See More ⇒
3DG19A NPN PCM TA=25 250 mW ICM 600 mA Tjm 150 Tstg -65 150 V(BR)CBO ICB=0.1mA 180 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=120V 0.05 A IEBO VCE=4V 0.05 A IC=50mA VCEsat 0.2 V IB=5mA VCE=5V hFE 80 I... See More ⇒
2SC1959(3DG1959) NPN /SILICON NPN TRANSISTOR , /Purpose Audio frequency power amplifier, driver stage amplifier and switching applications. h , 1W , 2SA562TM(3CG562TM) /Features Excellent h linearity FE FE 1 Watt output amplifier applications, complemen... See More ⇒
Detailed specifications: 3DG181, 3DG1815, 3DG1815M, 3DG182, 3DG183, 3DG1859, 3DG1906, 3DG1921, BD222, 3DG1959, 3DG1959M, 3DG19A, 3DG2001, 3DG2053, 3DG2058S, 3DG2060, 3DG210
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