All Transistors. 3DG1959 Datasheet

 

3DG1959 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DG1959
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO92

 3DG1959 Transistor Equivalent Substitute - Cross-Reference Search

   

3DG1959 Datasheet (PDF)

 ..1. Size:208K  foshan
3dg1959.pdf

3DG1959 3DG1959

2SC1959(3DG1959) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency power amplifier, driver stage amplifier and switching applications. : h , 1W , 2SA562TM(3CG562TM)/Features: Excellent h linearity FEFE 1 Watt output amplifier applications, complemen

 0.1. Size:227K  foshan
3dg1959m.pdf

3DG1959 3DG1959

2SC1959M(3DG1959M) NPN /SILICON NPN TRANSISTOR :,/Purpose: Audio frequency low power amplifier,driver stage amplifier and switching applications. : h , 2SA562M(3CG562M) FEFeatures: Excellent h Linearity, complementary pair with 2SA562M(3CG562M). FE

 9.1. Size:107K  china
3dg19a.pdf

3DG1959

3DG19A NPN PCM TA=25 250 mW ICM 600 mA Tjm 150 Tstg -65~150 V(BR)CBO ICB=0.1mA 180 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=120V 0.05 A IEBO VCE=4V 0.05 A IC=50mA VCEsat 0.2 V IB=5mA VCE=5V hFE 80 I

 9.2. Size:147K  lzg
3dg1923.pdf

3DG1959 3DG1959

2SC1923(3DG1923) NPN /SILICON NPN TRANSISTOR :,FM , Purpose: High frequency, FM,RF,MIX,IF amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Ratin

 9.3. Size:236K  lzg
3dg1906.pdf

3DG1959 3DG1959

2SC1906(3DG1906) NPN /SILICON NPN TRANSISTOR :,, Purpose: VHF amplifier, mixer, local osciliator. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 19 V CEO V 2.0 V EBO I 50 mA C I -50 mA E P 300 mW CT 150 j T -55150

 9.4. Size:210K  lzg
3dg1921.pdf

3DG1959 3DG1959

2SC1921(3DG1921) NPN /SILICON NPN TRANSISTOR :,, Purpose: High frequency high voltage amplifier, video output. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 250 V CBO V 200 V CEO V 5.0 V EBO I 50 mA C P 600 mW C T 150 j T -55150 st

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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