All Transistors. 3DG2383 Datasheet

 

3DG2383 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG2383

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92L

3DG2383 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG2383 Datasheet (PDF)

1.1. 3dg2383t.pdf Size:257K _china

3DG2383
3DG2383

2SC2383T(3DG2383T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电帧输出,伴音输出。 Purpose: Color TV class B sound output applications. 特点:V 高,可与 2SA1013T(3CG1013T)互补。 CEO Features: High V , complementary pair with 2SA1013T(3CG1013T). CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit

1.2. 3dg2383.pdf Size:228K _china

3DG2383
3DG2383

2SC2383(3DG2383) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电帧输出,伴音输出。 Purpose: Color TV class B sound output applications. 特点:V 高,可与 2SA1013(3CG1013)互补。 CEO Features: High V , complementary pair with 2SA1013(3CG1013). CEO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 160

 5.1. 3dg2308.pdf Size:177K _china

3DG2383
3DG2383

2SC2308(3DG2308) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低频放大,与 2SA1030(3CG1030)互补。 Purpose: Low frequency amplifier, complementary pair with 2SA1030(3CG1030). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 55 V CBO V 50 V CEO V 5.0 V EBO I 100 mA C I -100 mA E P 200 mW C T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 
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