3DG2732 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG2732
SMD Transistor Code: HEC
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
3DG2732 Transistor Equivalent Substitute - Cross-Reference Search
3DG2732 Datasheet (PDF)
3dg2732.pdf
2SC2732(3DG2732) NPN /SILICON NPN TRANSISTOR : Purpose: UHF frequency converter. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 j T -55150 stg /Electrical charact
3dg2736.pdf
2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR :, Purpose: UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55
3dg2734.pdf
2SC2734(3DG2734) NPN /SILICON NPN TRANSISTOR :,, Purpose: UHF frequency converter, local oscillatorwide band amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 20 V CBO V 11 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150
3dg27.pdf
3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO
3dg2710.pdf
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR : Purpose: Audio amplifier applications. : , 2SA1150(3CG1150) Features: High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 35 V CBO
3dg2717.pdf
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I
3dg2717m.pdf
2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR :/Purpose: TV final picture IF amplifier applications. :,h /Features: High gain, good linearity of h . FE FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO
3dg2712.pdf
2SC2712(3DG2712) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency general purpose amplifier applications. Features: High voltage, high current, high h , low noise, excellent h linearity. FE FE/Absolute maximum ratings(Ta=25)
3dg2715.pdf
2SC2715(3DG2715) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. : Features: High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. /Absolute maximum ratings(Ta=25) Sy
3dg2714.pdf
2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR :/Purpose: High frequency amplifier applications. :, Features: Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4
3dg2785.pdf
2SC2785(3DG2785) NPN /SILICON NPN TRANSISTOR :/Purpose: Driver stage of AF amplifier and low speed switching. :,, 2SA1175(3CG1175)/Features: High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE/Absolute maximum ratings(Ta=25)
3dg2786.pdf
2SC2786(3DG2786) NPN /SILICON NPN TRANSISTOR : Purpose: FM RF amplifier and local oscillator of FM tuner. : Features: High gain bandwidth product, small output capacitance,low noise figure. /Absolute maximum r
3dg2703.pdf
2SC2703(3DG2703) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. ::h =100320 FEFeatures: High DC current gain: h =100320. FE/Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO30 V V 30 V CEO V 5.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
