3DG2732 Specs and Replacement
Type Designator: 3DG2732
SMD Transistor Code: HEC
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
- BJT ⓘ Cross-Reference Search
3DG2732 datasheet
..1. Size:152K foshan
3dg2732.pdf 
2SC2732(3DG2732) NPN /SILICON NPN TRANSISTOR Purpose UHF frequency converter. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I 20 mA C P 150 mW C T 150 j T -55 150 stg /Electrical charact... See More ⇒
8.1. Size:177K foshan
3dg2736.pdf
2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR , Purpose UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55 ... See More ⇒
9.1. Size:110K china
3dg27.pdf
3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO ... See More ⇒
9.2. Size:223K foshan
3dg2710.pdf
2SC2710(3DG2710) NPN /SILICON NPN TRANSISTOR Purpose Audio amplifier applications. , 2SA1150(3CG1150) Features High DC current gain, complementary pair with 2SA1150(3CG1150). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO ... See More ⇒
9.3. Size:211K foshan
3dg2717.pdf
2SC2717(3DG2717) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO I ... See More ⇒
9.4. Size:234K foshan
3dg2717m.pdf
2SC2717M(3DG2717M) NPN /SILICON NPN TRANSISTOR /Purpose TV final picture IF amplifier applications. ,h /Features High gain, good linearity of h . FE FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 25 V CEO V 4.0 V EBO ... See More ⇒
9.6. Size:171K foshan
3dg2715.pdf
2SC2715(3DG2715) NPN /SILICON NPN TRANSISTOR /Purpose High frequency amplifier applications. Features High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage. /Absolute maximum ratings(Ta=25 ) Sy... See More ⇒
9.7. Size:189K foshan
3dg2714.pdf
2SC2714(3DG2714) NPN /SILICON NPN TRANSISTOR /Purpose High frequency amplifier applications. , Features Small reverse transfer capacitance, low noise figure. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 40 V CBO V 30 V CEO V 4... See More ⇒
9.8. Size:321K lzg
3dg2785.pdf
2SC2785(3DG2785) NPN /SILICON NPN TRANSISTOR /Purpose Driver stage of AF amplifier and low speed switching. , , 2SA1175(3CG1175) /Features High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒
9.9. Size:396K lzg
3dg2786.pdf
2SC2786(3DG2786) NPN /SILICON NPN TRANSISTOR Purpose FM RF amplifier and local oscillator of FM tuner. Features High gain bandwidth product, small output capacitance,low noise figure. /Absolute maximum r... See More ⇒
9.10. Size:290K lzg
3dg2703.pdf
2SC2703(3DG2703) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier applications. h =100 320 FE Features High DC current gain h =100 320. FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 30 V V 30 V CEO V 5.0 ... See More ⇒
Detailed specifications: 3DG27, 3DG2703, 3DG2710, 3DG2712, 3DG2714, 3DG2715, 3DG2717, 3DG2717M, TIP35C, 3DG2734, 3DG2736, 3DG2785, 3DG2786, 3DG2812, 3DG2839, 3DG2873, 3DG2878
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