3DG2786 Specs and Replacement
Type Designator: 3DG2786
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92S
3DG2786 Substitution
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3DG2786 datasheet
2SC2786(3DG2786) NPN /SILICON NPN TRANSISTOR Purpose FM RF amplifier and local oscillator of FM tuner. Features High gain bandwidth product, small output capacitance,low noise figure. /Absolute maximum r... See More ⇒
2SC2785(3DG2785) NPN /SILICON NPN TRANSISTOR /Purpose Driver stage of AF amplifier and low speed switching. , , 2SA1175(3CG1175) /Features High voltage, excellent h linearity, complementary pair with 2SA1175(3CG1175). FE /Absolute maximum ratings(Ta=25 ) ... See More ⇒
3DG27 NPN A B C D E PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 100 140 180 220 V V(BR)CEO ICE=0.1mA 60 100 140 180 220 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=30V 2.0 A ICEO VCE=30V 2.0 A IEBO ... See More ⇒
2SC2736(3DG2736) NPN /SILICON NPN TRANSISTOR , Purpose UHF/VHF frequency converter, local oscillator. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V CBO V 20 V CEO V 3.0 V EBO I 50 mA C P 150 mW C T 150 j T -55 ... See More ⇒
Detailed specifications: 3DG2714, 3DG2715, 3DG2717, 3DG2717M, 3DG2732, 3DG2734, 3DG2736, 3DG2785, TIP31, 3DG2812, 3DG2839, 3DG2873, 3DG2878, 3DG2881, 3DG2881A, 3DG2884, 3DG2909
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