All Transistors. 3DG3142 Datasheet

 

3DG3142 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG3142

SMD Transistor Code: HJ2_J3H_HJ4

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 450 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT23

3DG3142 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG3142 Datasheet (PDF)

1.1. 3dg3142.pdf Size:207K _china

3DG3142
3DG3142

2SC3142(3DG3142) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通高频放大。 Purpose: High frequency general-purpose amplifier applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 25 V CBO V 20 V CEO V 3.0 V EBO I 30 mA C P 150 mW C T 150 ℃ j T -55~150 ℃ stg 电性能

5.1. 3dg3137.pdf Size:60K _china

3DG3142
3DG3142

查询"3DG3137"供应商 华晶分立器件 3DG3137 高频放大环境额定双极型晶体管 1 概述与特点 3DG3137 硅 NPN 型超高频小功率晶体管 主要用于 VHF/UHF 频段作高频小功率放大或振 荡 该产品特点如下 特征频率高 反向漏电流小 饱和压降低 电流特性好 封装形式 B4(A3-02B) 8.64 9.39 2 电特性 2.1 极限

5.2. 3dg3130.pdf Size:157K _china

3DG3142
3DG3142

2SC3130(3DG3130) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高频放大、振荡、混频。 Purpose: High frequency amplifier, oscillation and mixing amplification. 特点:特征频率 f 高,共基极输出电容小和反向传输出电容小。 T Features: High f , small Cob and small Crb. T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 
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