3DG3440 Specs and Replacement
Type Designator: 3DG3440
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO18
3DG3440 Substitution
- BJT ⓘ Cross-Reference Search
3DG3440 datasheet
3DG3440(2N3440) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=2mA 300 V V(BR)CEO ICE=2mA 250 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=300V 5.0 A ICEO VCE=200V 2.0 A IEBO VEB=7V 10 A VBEsat 1.3 IC=50mA V IB=4mA VCEs... See More ⇒
3DG3439(2N3439) NPN PCM TA=25 800 mW ICM 1000 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=1mA 450 V V(BR)CEO ICE=1mA 350 V V(BR)EBO IEB=1mA 7.0 V ICBO VCB=350V 20 A ICEO VCB=300V 20 A IEBO VEB=6V 20 A IC=50mA VCEsat 0.5 V IB=4mA VCE=10V hFE ... See More ⇒
3DG3402(2SC3402) NPN PCM TA=25 300 mW ICM 100 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB=10 A 50 V V(BR)CEO ICE=100 A 50 V V(BR)EBO IEB=10 A 10 V ICBO VCB=40V 0.1 A ICEO VCB=40V 0.5 A IEBO VEB=5V 330 A IC=10mA VCEsat 0.3 V I... See More ⇒
2SC3478(3DG3478) NPN /SILION NPN TRANSISTOR Purpose General purpose amplifier applications requiring high breakdown voltages. , 2SA1376(3CG1376) Features High breakdown voltage, good h linearity, complementary to 2SA1376(3CG1376). FE /Absolute maxim... See More ⇒
Detailed specifications: 3DG3330, 3DG3332, 3DG3355, 3DG3356, 3DG3357, 3DG3399, 3DG3402, 3DG3439, BC549, 3DG3478, 3DG3545, 3DG3648, 3DG3779, 3DG380TM, 3DG3838K, 3DG383TM, 3DG3841
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