3DG3648 Specs and Replacement
Type Designator: 3DG3648
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT89
3DG3648 Substitution
- BJT ⓘ Cross-Reference Search
3DG3648 datasheet
3DG3648 NPN PCM TA=25 200 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 180 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 6.0 V ICBO VCB=120V 0.1 A ICEO VCE=4.0V 0.1 A IC=10mA VCEsat 0.15 V IB=1.0mA VCE=5V hFE 80 2... See More ⇒
Detailed specifications: 3DG3356, 3DG3357, 3DG3399, 3DG3402, 3DG3439, 3DG3440, 3DG3478, 3DG3545, BC556, 3DG3779, 3DG380TM, 3DG3838K, 3DG383TM, 3DG3841, 3DG388ATM, 3DG3904, 3DG4
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