3DG3648 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DG3648
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT89
3DG3648 Transistor Equivalent Substitute - Cross-Reference Search
3DG3648 Datasheet (PDF)
1.1. 3dg3648.pdf 
Size:109K _china
3DG3648 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 200 mW 极 ICM 200 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥180 V V(BR)CEO ICE=0.1mA ≥160 V V(BR)EBO IEB=0.1mA ≥6.0 V 直 ICBO VCB=120V ≤0.1 μA 流 ICEO VCE=4.0V ≤0.1 μA 参 IC=10mA 数 VCEsat ≤0.15 V IB=1.0mA VCE=5V hFE 80~2
Datasheet: D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , D32S6 , D32S7 , BC547 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 , D32W7 , D32W8 .
