3DG535 Specs and Replacement
Type Designator: 3DG535
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
3DG535 Substitution
- BJT ⓘ Cross-Reference Search
3DG535 datasheet
2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl... See More ⇒
3DG531(FG531) NPN A B C D PCM TA=25 700 mW ICM 200 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 30 40 50 V V(BR)CEO ICE=1mA 25 35 40 V V(BR)EBO IEB=1mA 3.0 4.0 V ICEO VCE=20V 0.5 mA IC=100mA VCEsat 0.5 V IB=10mA VCE=10V hFE 20 IC=5... See More ⇒
2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR Purpose Small signal general purpose amplifier applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10... See More ⇒
Detailed specifications: 3DG4155A, 3DG42, 3DG4401, 3DG458, 3DG5088, 3DG512B, 3DG512C, 3DG531, BC547, 3DG536KM, 3DG536M, 3DG5401, 3DG5551, 3DG5770, 3DG6, 3DG639, 3DG6520
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