All Transistors. 3DG535 Datasheet

 

3DG535 Datasheet, Equivalent, Cross Reference Search

Type Designator: 3DG535

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 0.9 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

3DG535 Transistor Equivalent Substitute - Cross-Reference Search

 

3DG535 Datasheet (PDF)

1.1. 3dg535.pdf Size:192K _china

3DG535
3DG535

2SC535(3DG535) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于 VHF 放大,混频器,振荡器。 Purpose: VHF amplifier, mixer, local oscillator. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 30 V CBO V 20 V CEO V 4.0 V EBO I 20 mA C P 100 mW C T 150 ℃ j T -55~150 ℃ stg 电性能参

5.1. br3dg536k.pdf Size:620K _update

3DG535
3DG535

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package. 特征 / Features 高电流和宽阔的安全工作区。 Large current capacity and wide ASO 用途 / Applications 用于小信号一般放大电路。 Small signal general purpose amplifier appl

5.2. 3dg536km.pdf Size:219K _china

3DG535
3DG535

2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10

 5.3. 3dg536m.pdf Size:219K _china

3DG535
3DG535

2SC536M(3DG536M) 2SC536KM(3DG536KM) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于小信号一般放大电路。 Purpose: Small signal general purpose amplifier applications. 极限参数/Absolute Maximum Ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit 3DG536M 40 V CBO V 3DG536KM 55 3DG536M 30 V V CEO 3DG536KM 50 V 5.0 V EBO I 10

5.4. 3dg531.pdf Size:109K _china

3DG535

3DG531(FG531)型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM TA=25℃ 700 mW ICM 200 mA Tjm 175 ℃ Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥30 ≥40 ≥50 V 极 V(BR)CEO ICE=1mA ≥25 ≥35 ≥40 V 限 V(BR)EBO IEB=1mA ≥3.0 ≥4.0 V 值 ICEO VCE=20V ≤0.5 mA IC=100mA VCEsat ≤0.5 V IB=10mA VCE=10V hFE ≥20 IC=5

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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