3DK002 Specs and Replacement
Type Designator: 3DK002
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
3DK002 Substitution
- BJT ⓘ Cross-Reference Search
3DK002 datasheet
3DK002 NPN A B C D PCM TC=25 30 W ICM 3 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=5mA 40 60 80 100 V V(BR)CEO ICE=5mA 40 60 80 100 V V(BR)EBO IEB=1mA 5.0 V ICEO VCE=30V 0.5 mA VBEsat 1.6 IC=1A V IB=0.1A VCEsat 0.5 VCE... See More ⇒
3DK001 NPN A B C D E PCM TC=25 1 W ICM 0.2 A Tjm 175 Tstg -55 150 VCE=10V Rth 150 /W IC=0.03A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO V... See More ⇒
Detailed specifications: 3DG82, 3DG847B, 3DG9013, 3DG9014, 3DG930, 3DG945, 3DG945M, 3DK001, 2N3906, 3DK010, 3DK023F, 3DK024E, 3DK030, 3DK050, 3DK10, 3DK100, 3DK101
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